Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE

Iida K; Kawashima T; Miyazaki A; Kasugai H; Mishima S; Honshio A; Miyake Y; Iwaya M; Kamiyama S; Amano H; Akasaki I

Journal of Crystal Growth, Vol.272, No.1-4, 270-273, 2004

DOI10.1016/j.jcrysgro.2004.08.052 Export Citation

Laser diode of 350.9 nm wavelength grown on sapphire substrate by MOVPE

Iida K, Kawashima T, Miyazaki A, Kasugai H, Mishima S, Honshio A, Miyake Y, Iwaya M, Kamiyama S, Amano H, Akasaki I

We have developed GaN/AlGaN multi-quantum-well (MQW) UV-Iaser diode (UV-LD) grown on sapphire substrate. The combination of a low-temperature-deposited AlN interlayer technology and lateral seeding epitaxy yielded crack-free and low-dislocation-density AlGaN. The lasing wavelength under pulsed current injection at room temperature was 350.9 nm, which is the shortest wavelength ever reported. (C) 2004 Elsevier B.V. All rights reserved.

Keywords:heteroepitaxial lateral overgrowth;metalorganic vapor phase epitaxy;AlGaN;GaN;LT-AlN interlayer;UV laser diode