High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE

Kawashima T; Iida K; Miyake Y; Honshio A; Kasugai H; Imura M; Iwaya M; Kamiyama S; Amano H; Akasaki I

Journal of Crystal Growth, Vol.272, No.1-4, 377-380, 2004

DOI10.1016/j.jcrysgro.2004.08.101 Export Citation

High-quality Al0.12Ga0.88N film with low dislocation density grown on facet-controlled Al0.12Ga0.88N by MOVPE

Kawashima T, Iida K, Miyake Y, Honshio A, Kasugai H, Imura M, Iwaya M, Kamiyama S, Amano H, Akasaki I

To realize high-performance UV-light-emitting diodes (UV-LEDs), thick, crack-free and high-crystalline-quality AlGaN films with a low threading dislocation density and a device structure without any absorbing layer such as GaN are essential. Crack-free and low-dislocation-density AlGaN is developed using facet-controlled technology, and does not contain any GaN layer. As a result, the density of the threading dislocations in the overgrown AlGaN is as low as 5 x 10(7) cm(-2) over the entire wafer. (C) 2004 Elsevier B.V. All rights reserved.

Keywords:organometallic vapor phase epitaxy;selective epitaxy;nitrides;semiconducting III-V materials;light-emitting diodes