(AlInGa)P red laser diodes have become increasingly attractive as light sources for various applications. High-quality AlInGalP and InGaP layers are of key importance for the performance of these lasers. In this report we explore the metalorganic vapor phase epitaxy (MOVPE) growth of red lasers using liquid precursors, i.e. replacing the highly toxic gaseous hydrides with liquid MO-V sources. This report will show material data (X-ray, PL, SIMS, etc.) on In(AI)GaP layers grown using TBP. The material performance of AlInGaP and InGaP layers grown using TBP and having different compositions will be compared to similar layers grown using PH3. Growth parameters (temperature, V/III ratio) that will be presented will outline the advantages of MO-V growth such as lower growth temperatures and lower V/III ratios, as well as potential benefits on the maintenance of the reactor. Finally, we will show preliminary data on the full red laser epitaxial stack using the optimized growth conditions for each layer. (C) 2004 Elsevier B.V. All rights reserved.