Hybrid structures consisting of ferromagnetic Mn(Ga)As clusters, which are embedded defect-free in a p-GaAs:Mn matrix, are realized by epitaxial growth using metalorganic vapour-phase epitaxy (MOVPE). The successful Te-co-doping of the GaAs:Mn matrix leads to a change from p-to n-type carrier transport. This behaviour enables the growth of structures for studying electron spin-injection effects. First laser devices including a co-doped hybrid structure in the n-type region of the contact of the device are realized. Investigations by SQUID magnetometer show that the ferromagnetic properties of the Mn(Ga)As clusters are not influenced by the Te co-doping of the surrounding GaAs matrix. (C) 2004 Elsevier B.V. All rights reserved.