The present work numerically investigates the influence of a generic inertial flight mode orbiting system of low eccentricity and long orbital period on the final solid dopant distribution of a set of semiconductor crystals virtually grown by the Bridgman method. For the lowest 1 mug level it has been noted that, depending on the semiconductor, some disturbances could arise. For higher mug levels spot-like alternate dopant structures with a frequency equal to the orbital one have been computationally predicted in the solid phase. At higher levels, these structures spread trying to attain the opposite side of the crystal breaking any kind of symmetry. All these results are independent on the length of the sample and on the external thermal environment. Thus, to improve crystal homogeneity inside long period inertial flight mode spatial platforms some corrective strategies are strongly recommended. (C) 2004 Elsevier B.V. All rights reserved.