The PbTe films were grown on Si(1 1 1) substrate by hot wall epitaxy (HWE). X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used to study the films. The results show that the PbTe films are twinned ones with preferred <1 0 0> orientation. The angles of normal direction of PbTe(1 0 0) facets which are perpendicular to the surface of Si substrate are 30degrees or 60degrees. The interface energy is calculated by CASTEP module of materials studio and the reason for this phenomenon is discussed. (C) 2004 Elsevier B.V. All rights reserved.