In this paper the results of directional high-pressure growth of GaN on sapphire/GaN MOCVD templates are described. The use of a baffle plate is presented, in order to obtain the flat crystallization front at the substrate. The GaN growth rate as a function of the applied temperature gradient and time is analyzed in detail. The optimal temperature gradient for the fastest growth is determined. The changes of the growth rate with time are explained. The defect selective etching method and transmission electron microscopy are used to determine the dislocation density in the deposited GaN material. All results are compared to those obtained for directional growth of GaN on pressure grown GaN crystals (platelets). (C) 2004 Elsevier B.V. All rights reserved.