We have investigated bulk growth of 6H-SiC crystals along the [0115] direction. The (0115) facet was obtained in a natural way during growth experiments using close-to-equilibrium conditions which facilitate facets appearance. Seeded growth using (0115)-oriented seeds was demonstrated. The occurrence of the (0115) facet depended strongly on the thermal field geometry. When tailoring a flat thermal field a big facet of 15 mm in diameter was obtained. Hollow micropipe defects propagating along the c-axis of the seed were vanished in the grown crystal leading to a completely micropipe-free region. Polytype information seemed to be transmitted along the c-axis whereas hollow cores propagated along the usual growth direction due to voids migration. Growth along the [0115] direction is considered to be very promising for preparation of micropipe-free SIC crystals. (c) 2004 Elsevier B.V. All rights reserved.