The latest results from MBE-grown InGaN multiple quantum well laser diodes and light emitting diodes are presented. The laser diodes were grown on free-standing n-type GaN substrates and fabricated into index guided structures with a ridge width of 3.6 and 1000 pm cavity length. Laser operation occurred at room temperature tinder pulsed current injection up to a 10% duty cycle. A typical best threshold current density of 7 kA cm(-2) and as operating voltage of 10 V was achieved. Light emitting diodes were grown on silicon-doped GaN template substrates and fabricated into 1 mm(2) header mounted, non-encapsulated chips. At 20 mA dc current operation, an output power of 3 mW was measured. A peak power of 10 mW was achieved at 90 mA before thermal rollover occurred. The lasers and light emitting diodes emitted in the wavelength range 390-410 nm. © 2004 Elsevier B.V. All rights reserved.