Sb-introduced highly strained GaInAs/GaAs quantum wells (QWs) were grown by solid-source molecular beam epitaxy. The Sb introduction procedure and growth temperature dependence of photoluminescence (PL) property were investigated. Sb introduction into the upper part of the QW showed poor PL property and this result indicates that the three-dimensionally grown GaInAs is not recovered by the surfactant effect of Sb. For the case of the Sb introduction into the lower part of the QW, as the Sb introduction into the whole QW the PL peak intensity and linewidth improved as well. A noticeable PL improvement was also observed with increase in the growth temperature only for the case of Sb introduction. Sb introduction widened the growth temperature window for highly strained GaInAs QWs. © 2005 Elsevier B.V. All rights reserved.