InGaAs and GaAs layers and GaAs/AlAs superlattice (SL) structures were grown by MBE on (757)B GaAs substrates and their corrugated growth fronts induced by the step bunching process were closely investigated by scanning transmission electron microscope (STEM). Cross-sectional images obtained from the [101] direction have revealed asymmetries and other features of strongly corrugated InGaAs layers and a smoothing process in GaAs/AlAs SL layers. © 2005 Elsevier B.V. All rights reserved.