The heterointerfaces in InAs and InSb thin films grown on GaAs were found to affect the temperature dependence of the film's electrical properties such as electron mobility, electron density, and resistivity. The InAs and Irish surfaces of the films, which act as heterointerfaces with air, were found to similarly affect the electrical properties. It was found that the electron mobility of both InAs and InSb films grown on GaAs substrates has a three-layer structure. © 2005 Elsevier B.V. All rights reserved.