Molecular beam epitaxy of p-type cubic GaMnN layers

Foxon CT; Novikov SV; Zhao L; Edmonds KW; Giddings AD; Wang KY; Campion RP; Staddon CR; Fay MW; Han Y; Brown PD; Sawicki M; Gallagher BL

Journal of Crystal Growth, Vol.278, No.1-4, 685-689, 2005

DOI10.1016/j.jcrysgro.2004.12.112 Export Citation

Molecular beam epitaxy of p-type cubic GaMnN layers

Foxon CT, Novikov SV, Zhao L, Edmonds KW, Giddings AD, Wang KY, Campion RP, Staddon CR, Fay MW, Han Y, Brown PD, Sawicki M, Gallagher BL

Using Mn as a dopant, we developed a new method for reproducible p-type doping of cubic GaN in plasma-assisted molecular beam epitaxy (PA-MBE). Hole densities > 10(18) cm(-3) and bole mobilities > 300 cm(2)/V s have been achieved in our cubic GaMnN films. The Ga:N flux ratio during growth has a strong influence on the electrical properties of the films. PA-MBE growth of cubic GaMnN shows great potential for electrical and spintronic devices. © 2005 Elsevier B.V. All rights reserved.

Keywords:molecular beam epitaxy;nitrides;semiconducting III-V materials