III-V semiconductor Indium Arsenide (InAs) nanocrystals embedded in silica glasses was synthesized by combining the sol-gel process and heat treatment in H-2 gas. The size of InAs nanocrystals can be easily controlled via changing the In and As content in the starting materials and the heating temperature in a H-2 gas atmosphere. Absorption measurements indicate a blue shift in energy with a reduction on the In and As content in the SiO2 gel glasses as a result of quantum confinement effects. A near-infrared photoluminescence with peak at 3.40 mu m was observed at 6 K under 514.5 nm Ar+ laser excitation from InAs nanocrystals embedded in the silica gel glasses. (c) 2005 Elsevier B.V. All rights reserved.