GaN bulk crystals are grown at moderate temperature and pressure from solution using solid GaN as the feedstock. Gallium-free solvents composed of Li3N plus fluoride salts enable GaN feedstock to be dissolved and transported through the liquid phase then deposited in a cooler location within the crucible. Growth parameters are presented along with characterization data collected for resulting GaN crystals. As a preliminary result, single crystals 0.5 mm long with a rhombic cross section (0.1 mm across) have been grown. The long axis of the crystals is aligned with the r direction. (c) 2005 Elsevier B.V. All rights reserved.