The aim of this study has been to realize growth conditions suitable for seeded sublimation growth of AlN and to understand the relationship between external growth parameters and the initial stages of growth with respect to growth mode and structure evolution. Close space sublimation growth geometry has been used in a RF-heated furnace employing high-purity graphite coated by TaC with a possibility to change the growth environment from C- to Ta-rich. Influence of certain impurities on the initially formed crystallites with respect to their shape, size and population has been considered. It is shown that some impurity containing vapor molecules may act as transport agents and suppliers of nitrogen for the AlN growth. SiC seeds, both bare and with MOCVD AlN buffer, have been employed. By varying the process conditions we have grown crystals with different habits, e.g. from needles, columnar- and plate-like, to freestanding quasi-bulk material. The growth temperature ranged 1600-2000 degrees C whereas the optimal external nitrogen pressure varied from 200 to 700 mbar. There is a narrow parameter window in the relationship temperature-pressure for the evolution of different structural forms. Growth modes with respect to process conditions are discussed. (c) 2005 Elsevier B.V. All rights reserved.