The DC electrical conduction mechanism in vacuum evaporated Al-Bi-2-Te-3-Al thin film sandwich system in the thickness range 350-3300 angstrom at different temperatures (300-483 K) was found to be Richardson-Schottky type. The samples showed a Log J vs. F-1/2 dependence, from which the field lowering coefficient beta was evaluated. The height Phi(0) of the potential barrier was determined. Variation of activation energy with applied voltages and temperatures was investigated and the results are discussed. From the C-V analysis the flat band potential and the ionized charge density was found to be 2.37 eV and 7.992 x 1027 cm(4), respectively. Hot probe method was employed to identify the type of conduction in these films and are found to be p-type. (c) 2005 Elsevier B.V. All rights reserved.