Liquid phase epitaxy (LPE) of SiC from a diluted Si-based melt was performed on wafers with (0 1 F 5) orientation on physical vapor transport (PVT) grown 6H-SiC. Epitaxial growth on (0 1 (1) over bar 5) substrates occurred by a step flow mode, producing mirror-like homoepitaxial SiC layers. Using the method of horizontal dipping, layers with a thickness up to 12 mu m were grown on (0 1 (1) over bar 5) Si-side, with a growth rate of about 0.2 mu m/h. The roughness of the deposited layer was about 10 run, comparable with the as-polished state of the processed seed. However, the epitaxial growth on (0 1 (1) over bar 5) G side showed a completely different growth morphology. Rough surface with large islands showing a pronounced step bunching developed on C-side with a growth rate of about 1 mu m/h. (c) 2005 Elsevier B.V. All rights reserved.