In this paper it is shown that due to the pressure p in the furnace there are three limitations alpha(c), alpha(c), alpha(c) for the contact angle alpha(c). The lower limit alpha(c) is in the range (0, pi/2 - alpha(e)), depends on p and on the half-thickness w of the die. The upper limit alpha(c) is in the range (pi/2 - alpha(e), pi/2) and increases when p increases. The limit alpha(c) is in the range (pi/2 -alpha(e), alpha(c)) and depends on p and w. It is shown also, that there exist two limitations w(1)(p) and w(2)(p) for w. If w is in the range (0, w(1), (p)), then the growth angle is achieved for the contact angle in the range (pi/2 - a(e), alpha(c) ), and if w epsilon (w(1) (p), w(2)(p)) the growth angle is achieved for the contact angle in the range (pi/2 - alpha(e), alpha(c)). The menisci are concave. If w > w(2)(p), then the growth angle is achieved for the contact angle in the range (alpha(c), alpha(c)) and the meniscus is convex-concave. Numerical examples are given for thin silicon sheets of half-thickness 0.5(cm X 10(-2)). (c) 2005 Elsevier B.V. All rights reserved.