PbSe thin film and PbSe/PbSrSe multiple quantum well (MQW) structures were successfully grown on (110) BaF2 substrates by molecular beam epitaxy. The average linewidth of the rocking curve from high-resolution X-ray diffraction measurements of the (220) reflection for the PbSe thin film was 60 arcsec, which indicates high crystalline quality. The dislocation density estimated from the rocking curve was 1 x 10(7) cm(-2). Strong photoluminescence (PL) of the MQW structure at room temperature was observed. This PL signal was two times larger than those measured from a duplicate structure grown at the same time on a (111) BaF2 substrate. The energy bandgap of (110) PbSe follows the same temperature dependence as [100]- and [111]-orientated PbSe. (c) 2005 Elsevier B.V. All rights reserved.