Epitaxial growth of 4H-SiC is reported at repeatable growth rates up to 32 mu m/h in a horizontal hot-wall CVD reactor at temperatures between 1530 and 1560 degrees C. The growth rate as a function of silane (the source of silicon) flow was studied. The doping concentration was also investigated. The conversion from p- to n-type conductivity Occurred when the Si/C ratio was changed from 1.0 to 1.2. Films up to 65 mu m thick were grown with a growth rate of 32 mu m/h. The surface roughness increased slightly for thicker films, with the occasional incorporation of carrot-like and triangular defects. The Structural quality of the films, measured by X-ray diffraction, is comparable to the best results reported in the literature for 4H-SiC. (c) 2005 Elsevier B.V. All rights reserved.