A modified sol-gel method was used to fabricate (Pb0.25Ba0.15Sr0.6)TiO3 (PBST) thin films from the precursor solution with 0, 10 and 27 V% (volume percent) 2-methoxyethanol on a Pt/Ti/SiO/Si substrate. The structural and dielectric properties of PBST thin films were investigated as a function of 2-methoxyethanol concentration in the precursor Solution. XRD and SEM analysis showed that we can get pure PBST perovskite phase and relative fine density thin films with smooth surface only using proper concentration (10 V %) of 2-methoxyethanol in the precursor solution. Furthermore, the thin film deposited from precursor with 10 V% 2-methoxyethanol has the highest dielectric constant of 931 and the least loss factor of 0.031 and its tunability and figure of merit (FOM) are 76% and 24.1 %, respectively. The results show that the structural and dielectric properties of PBST thin films are strongly dependent oil the 2-methoxyethanol in the precursor solution. (c) 2005 Elsevier B.V. All rights reserved.