MgTiO3 thin films were grown on Si(100) substrate by radio frequency (RF) magnetron sputtering. The microstructure and the surface morphology of MgTiO3 thin film have been studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD showed that the deposited films exhibited a polycrystalline microstructure. The grain size of the film increased with an increase in the RF power and substrate temperature. The electrical properties were measured using capacitance-voltage and current-voltage measurements on metal-insulator semiconductor (MIS) capacitor structures. At a Ar/O-2 ratio of 100/0, RF power of 400 W and substrate temperature of 400 degrees C, the MgTiO3 films with 6 mu m thickness possess a dielectric constant of 16.2 (f = 10 MHz), a leakage current density of 10(-9) A/mm(2). (c) 2005 Elsevier B.V. All rights reserved.