Indium-arsenide (InAs)-based devices are promising for next generation electronic and optoelectronic applications. Improving these devices requires greater control of the InAs quantum well properties, which in part, are related to the strain induced from the substrate material, buffer layer thickness, barrier composition, doping, and the heterointerface. This report focuses on the latter and includes X-ray diffraction and Hall results from a statistical experimental design (SED), which focused on the growth sequence at the heterointerface and growth throughout the channel, and illuminates correlations between structural variations and the electronic properties in strained InAs quantum well structures produced by molecular beam epitaxy (MBE). This data suggest that as more antimony from the sublayer is incorporated in the InAs layer, a product of anion exchange between antimony surface atoms and ensuing arsenic flux atoms, the strain states vary along with InAs channel mobility. (c) 2005 Elsevier B.V. All rights reserved.