The reaction kinetics of stacked layers of binary In-, Ga- and Cu-selenides is investigated by differential thermal analysis using different constant heating rates. We found that the kinetics of the formation of CuInSe2 depends on the binary selenides being present. The kinetic parameters of the reactive crystallization of CuInSe2 and CuGaSe2 were derived. (c) 2005 Elsevier B.V. All rights reserved.