Orientation selective epitaxial growth of CeO2(1 0 0) and (1 1 0) layers is attained on practical H-terminated Si(1 0 0) surfaces by controlling substrate bias and a growth rate using reactive DC magnetron Sputtering enhanced with an inductively coupled RF plasma ill an Ar/O-2 environment. Application of oxygen radical beams to reactive sputtering proved to enable growth temperature lowering by at least 100 degrees C in the CeO2(1 0 0) layer growth under optimum substrate bias of 15 V, wherein conventionai reactive sputtering requires similar to 800 degrees C. X-ray diffraction analyses confirmed that crystalline quality of CeO2(1 0 0) layers grown with the oxygen radical beam application is much improved than those grown by conventional reactive sputtering. (c) 2005 Elsevier B.V. All rights reserved.