CdTe(2 1 1)B epilayers were grown on 3 in Si(2 1 1) substrates which misoriented 0-10 degrees toward [1 1 1] by molecular beam epitaxy (MBE). The relationship of X-ray double-crystal rocking curve (XRDCRC) FWHM and deflection angle from CdTe(21 1) to Si(21 1) was studied. For 4.2-4.5 degrees mu m CdTe, the best value of FWHM 83 arcsec was achieved while deflection angle is 2.76 degrees. A FWHM wafer mapping indicated a good crystalline uniformity of 7.4 mu m CdTe on tilting Si(2 1 1), with FWHM range of 60-72 arcsec. The shear strains of these epilayers were analyzed, using reciprocal lattice points of symmetric and asymmetric reflections measured by high-resolution multi-crystal multi-reflection X-ray diffractometer (HRMCMRXD). It was found that the shear strain angle gamma((0 1 1)) of epilayer is effectively reduced by using proper tilting Si(2 1 1) substrate. It was also proved that the lattice parameter of CdTe(2 I I.)B is affected by the shear strain and thermal strain. (c) 2006 Elsevier B.V. All rights reserved.