Polycrystalline MoSe2 semiconductor thin films were obtained by using relatively simple chemical bath deposition method, the reaction between Ammonium molybdate, tartaric acid, hydrazine hydrate and sodium selenosulphate in an aqueous alkaline medium at 363 K has been used to prepare films. Various preparative conditions of MoSe2 thin films are outlined. The as grown films were found to be transparent, uniform, well adherent, brown in color. The prepared films were studied using X-ray diffraction, scanning electron microscopy, optical absorption and electrical resistivity properties. The direct optical band gap value E-g for the films was found to be as the order of 1.43 eV at room temperature and having specific electrical resistivity of the order of 10(4) Omega cm showing n-type conduction mechanism. The utility of the adapted technique is discussed from the point of view of applications based on the optoelectric and structural data obtained. (c) 2006 Elsevier B.V. All rights reserved.