We have grown single crystalline GaMnN films by a horizontal hydride vapor-phase epitaxy (HVPE) system. The structures and crystal quality were confirmed by XRD and Raman scattering measurements. The structure analysis indicated that we obtained uniform GaMnN solid-solution films; the Mn atoms were substituted for Ga sites and did not form Mn precipitates or clusters. The superconductor quantum interference device (SQUID) results show that the GaMnN films without the phase separation exhibit paramagnetic properties. (c) 2006 Elsevier B.V. All rights reserved.