Epitaxial films of GaN:Mn have been grown on c-sapphire substrates by low pressure metal-organic chemical vapor deposition (LP-MOCVD) by Mn periodic delta-doping. The samples showed ferromagnetic behavior at room temperature with hysteresis curves showing a coercivity of 170 Oe. No ferromagnetic second phases and no significant deterioration in crystal quality with the incorporation of Mn were detected by high-resolution X-ray diffraction (XRD). The Mn concentrations of the layers were determined to be 0.227% by proton induced X-ray emission (PIXE). (c) 2006 Elsevier B.V. All rights reserved.