Journal of Crystal Growth, Vol.298, 413-417, 2007
Influence of the reactor inlet configuration on the AlGaN growth efficiency
This paper discusses the results of a combined modeling and experimental analysis of AlGaN deposition in the horizontal two-flow AIX 200/4 RF-S reactor. The purpose of this study is to examine conventional and inverted supply of the precursors into the reactor with respect to the growth reproducibility and efficiency of the aluminum (Al) incorporation. It has been found that the use of the inverted inlet improves the reproducibility of the growth process and provides a good control of AlGaN deposition. At the same time, the Al content appears to be somewhat lower for the inverted inlet configuration. A good agreement between the experimental data and model predictions allows us to use the modeling results for interpretation of the experimental findings. (c) 2006 Elsevier B.V. All rights reserved.