InP-quantum dots were grown in between different Al-containing AlxGa1-xInP barriers in order to increase their emission energy and localization energy. We observed emission energies from 1.85 eV (670 nm) to 2.24 eV (554 nm). From time-resolved photoluminescence measurements performed at different temperatures we found a strong dependence of the excitonic decay times both on the Al-content of the barrier and the growth temperature of the quantum dots due to diffusion of Al and Ga from the barrier into the dots. (c) 2006 Elsevier B.V. All rights reserved.