The quantum confined Stark effect reduces the radiative recombination in strained GaInN/GaN heterostructures grown along the strong polar c-direction. Growth on semipolar side facets of selectively grown triangular GaN stripes can be used to combine the advantages of the good quality of GaN grown on c-plane sapphire and the reduced internal piezoelectric field on such non-c crystal planes. We investigated the characteristics of structures grown along the < 1 (1) over bar 00 > and < 11 (2) over bar0 > crystal directions and studied the influence of Mg doping of the top layer. For a wide range of parameters, we achieved a smooth surface of the inclined facets of stripes oriented along < 11 (2) over bar0 > direction, while there are many inverted pyramid defects at the apex and a rough surface on the inclined facets for stripes oriented along < 1 (1) over bar 00 >. Moreover, we found indications for a lower p-type conductivity for the Mg doped top layer grown on stripes running along < 1 (1) over bar 00 > for the used growth parameters. The low vertical growth rate of Mg doped GaN can lead to a not completely closed top layer at the apex of our stripes. Therefore, we used pulsed precursor gas supply to improve this growth behavior. For light emitting diodes grown on the facets of < 11 (2) over bar0 >-oriented stripes, this results in good electroluminescence (EL) with 3 mW optical output power at 111 mA under DC conditions on-wafer. For stripes oriented along < 1 (1) over bar 00 >, only poor EL was achieved. (c) 2006 Published by Elsevier B.V.