The vertical conductivity of the p-Alo(0.11)Ga(0.89)N/GaN SLs has been measured and calculated. The measured result (1.35 x 10(-5) S cm(-1)) is in good agreement with the calculated result (2.26 x 10(-5) S cm(-1)), indicating that the adoption of Fermi-Dirac distribution and sequential tunneling model in our calculation is very plausible. As a result, it is suggested that in p-AlGaN/GaN SLs the Fermi-Dirac distribution need to be considered in calculation related to hole distribution. (c) 2006 Elsevier B.V. All rights reserved.