The preparing technique of chemical solution deposition (CSD) for La0.85Ag0.15MnO3 and La0.85Ag0.1MnO3 colossal magnetoresistance (CM R) film is investigated. Polycrystalline-like La0.85Ag0.15MnO3 films are obtained on LaAlO3 (h 0 0) and YSZ (h 0 0) singlecrystal substrates as a seed layer is not utilized. However, as a seed layer is used, an epitaxial-like La0.85Ag0.1MnO3 film can be successfully fabricated on LaAlO3 (h 0 0) single-crystal substrate. XRD shows that Ag atoms can substitute La atoms without forming any second phases. The magneto-transport property measurement shows that the polycrystalline-like La0.85Ag0.15MnO3 and the epitaxial-like La0.85Ag0.10MnO3 films behave as CMR effect in the whole temperature region below metal-insulator transition (T-P) and in the vicinity of T-P, respectively. The results indicate that the CSD method is a worthwhile technique for preparing manganite CMR films with tuning grain orientations. (c) 2006 Elsevier B.V. All rights reserved.