With the use of sublimation epitaxy in vacuum and hydride vapor phase epitaxy (HVPE) a heterostructure n-GaN/p-6H-SiC/n-SiC on base top of n + 6H-SiC substrate was developed. The electrical properties of the n-GaN/p-6H-SiC heterojunction was investigated and prototype of hetero bipolar transistor (HBT) was fabricated. It was shown that this device can work up to similar to 350 degrees C. It was concluded that device parameters can be improved by further optimization. (c) 2006 Elsevier B.V. All rights reserved.