Low-temperature magneto-transport properties of AlxGa1-xAsySb1-y/InAs deep quantum wells (QWs) with different well widths (L-w = 15-500 nm) and their dimensionality were studied. The Hall data were analyzed by means of the two-carrier model: coexistence of electrons and holes for L-w = 15-150 nm and existence of two types of electrons with different mobility for L-w = 300 and 500 nm. The profile of perpendicular magnetoresistance (MR), rho(xx)(B-perpendicular to) for the two-dimensional electrons (2DEs) in narrow QWs (L-w = 15 and 50 nm) can be divided into the following four regimes: (1) the negative MR due to the weak localization (WL) in extremely low B-fields, (2) the crossing of rho(xx) for different temperatures at B-c = 1/mu(e) in moderate B-fields due to the orbital effect on the elect to n-electron interaction, (3) the Shubnikov-de Haas oscillations and (4) the quantum Hall effect in bigh-B fields. As for the in-plane MR except in the very low-field region characterized by the WL, Delta rho(xx)(B-parallel to)/rho(0) always starts from a negative one essentially independent of T, which was explained by the classical boundary scattering at the wall of the barrier in quasi-ballistic regime. The quantum Hall resistance of the electron-hole system has also been discussed. (c) 2007 Elsevier B.V. All rights reserved.