We report on molecular-beam epitaxy (MBE) of Mn-doped GaAs films grown. at relatively high temperatures and their properties. The samples were grown at 400, 450, 530, and 560 degrees C and their growth fronts were monitored by in situ reflection high-energy electron diffraction (RHEED) during the entire growth. From the RHEED pattern, we found that the maximum doping composition of Mn is subpercent at these temperatures. The RHEED pattern and the surface morphology of the samples grown at 400 and 450 degrees C were influenced strongly by As overpressure and Mn doping. (c) 2006 Elsevier B.V. All rights reserved.