Developments for the production of high-quality and high-uniformity AlGaN/GaN heterostructures by ammonia MBE

Cordier Y; Semond F; Massies J; Leroux M; Lorenzini P; Chaix C

Journal of Crystal Growth, Vol.301, 434-436, 2007

DOI10.1016/j.jcrysgro.2006.11.286 Export Citation

Developments for the production of high-quality and high-uniformity AlGaN/GaN heterostructures by ammonia MBE

Cordier Y, Semond F, Massies J, Leroux M, Lorenzini P, Chaix C

In this work, we describe the operation conditions for succesful production of AlGaN/GaN heterostrures in a molecular beam eptixay (MBE) reactor using ammonia. This concerns both cells design and procedure for recovery of ammonia, but also assesment of reproducibility, quality and uniformity of heterostructures grown on silicon, (c) 2007 Elsevier B.V. All rights reserved.

Keywords:molecular beam epitaxy;nitrides;high electron mobility transistors