We investigate the molecular beam epitaxial growth (MBE) of (Ga,In)(N,As) multiple quantum wells at a low substrate temperature and under low As pressure. The advantages of this growth concept to achieve 1.55 mu m emissions are as follows: (i) the low growth temperature prevents composition modulations, leading to abrupt heterointerfaces; (ii) the low As pressure allows the introduction of a large amount of N in the layers due to the reduced competition for incorporation of group V elements; (iii) reducing the As pressure counteracts the effect of the low growth temperature, thus improving photoluminescence intensity. With this concept, (Ga,In)(N,As) quantum well emitting at 1.55 mu m are successfully grown in two MBE systems, equipped with different As source configurations. (c) 2006 Elsevier B.V. All rights reserved.