c-Axis-oriented hexagonal Fe3N films were epitaxially grown on Si(I 1 1) substrates by molecular beam epitaxy using AlN/3C-SiC intermediate layers. Fe3N epitaxial film grown on AlN/C-3-SiC/Si(I 1 1) has a smooth surface and atomically flat two-dimensional terraces. It was found that the magnetic moments of Fe3N epitaxial film faced parallel to the film plane, and that the saturation magnetization per Fe atom was approximately 1.8 mu(B) at 5K, where mu(B) is the Bohr magneton. The nitrogen composition in FexN (2

Keywords:molecular beam epitaxy;nitrides;magnetic materials;semiconducting III-V materials