Fabrication of ultra-low density and long-wavelength emission InAs quantum dots

Huang SS; Niu ZC; Ni HQ; Xiong YH; Zhan F; Fang ZD; Xia JB

Journal of Crystal Growth, Vol.301, 751-754, 2007

DOI10.1016/j.jcrysgro.2006.11.299 Export Citation

Fabrication of ultra-low density and long-wavelength emission InAs quantum dots

Huang SS, Niu ZC, Ni HQ, Xiong YH, Zhan F, Fang ZD, Xia JB

By optimizing the molecular beam epitaxy growth conditions of self-organized InAs/GaAs quantum dots (QDs), we obtained an ultra-low density system of InAs QDs (4 x 10(6)cm(-2)). Photoluminescence (PL) spectroscopy reveals the emission wavelength at room temperature to be longer than 1300 nm with a GaAs capping layer. (c) 2007 Elsevier B.V. All rights reserved.

Keywords:long wavelength;low density;molecular beam epitaxy;quantum dots