We fabricated self-assembled InAs quantum dots (QDs) embedded with a combined set of a GaNAs strain-compensating layer (SCL) and an InGaAs strain-reducing layer (SRL) by using atomic hydrogen-assisted molecular beam epitaxy (H-MBE) with a RF plasma nitrogen source. By inserting an InGaAs SRL between the InAs QD layer and GaNAs SCL, we were able to achieve a significant improvement of optical properties. A 1.3 mu m-range photoluminescence (PL) emission was clearly obtained at 300 K from QDs embedded in a 5 nm-thick In0.15Ga0.85As SRL followed by a 20 nm-thick GaN0.008As0.992 SCL. Further, PL emission from the first excited state of QDs was also observed under a high excitation intensity of similar to 20.0W/cm(2). (c) 2006 Elsevier B.V. All rights reserved.