We report the molecular beam epitaxial growth and characteristics of 1.45 mu m metamorphic InAs quantum dot lasers grown on GaAs. By detailed investigation of the growth kinetics of the metamorphic quantum dot heterostructures, we have achieved high-quality 1.45 mu m metamorphic quantum dot layers that exhibit intense and narrow photoluminescence linewidths (similar to 30 meV) at room temperature. Utilizing the techniques of p-doping and tunnel injection, we have also realized high-performance 1.45 Pin lasers that exhibit ultra-low threshold current density (<= 70 A/cm(2)), very high temperature stability (T-o = 556 K) in the temperature range of 263-305 K, and large frequency response (f(-3dB) = 8 GHz). (c) 2006 Elsevier B.V. All rights reserved.