A GaNyAs1-x-yBix layer was grown on an n-GaAs substrate by molecular-beam epitaxy (MBE) for GaNyAs1-x-yBix/GaAs double-heterostructure (DH) diodes with temperature-insensitive wavelength emission. The MBE was carried out using solid Ga, Bi, and As sources and nitrogen radicals generated from N-2 gas in RF plasma. The electroluminescence (EL) spectrum at a wavelength of 1.3 mu m from the GaNyAs1-x-yBix active layer is insensitive to the temperature. The dependence of the EL peak wavelength on temperature was determined to be as small as 0.09 nm/K. This value is much smaller than that of the GaInAsP/InP DH diode of 0.4 nm/K. The temperature-insensitive EL peak wavelength reflects the temperature-insensitive band gap of the GaNyAs1-x-yBix alloy. (c) 2006 Elsevier B.V. All rights reserved.