We report on the development of a double heterojunction bipolar transistor (DHBT) technology on InP substrates for high-speed data communication. The technology is based on DHBTs with an InP emitter, a graded InGaAs:C base and a composite InGaAs/InGaAsP/InP collector, grown by solid source phosphorous MBE. High carbon doping levels in the base layer with excellent carrier mobility values allow the fabrication of devices with DC current gain similar to 90 and cut-off frequencies beyond f(t) = 265 GHz. Using this technology, integrated circuits, including lumped amplifiers, voltage controlled oscillators, multiplexers and demultiplexers, suitable for operation at 40 and 80 Gbit/s have been successfully fabricated. (c) 2007 Elsevier B.V. All rights reserved.