Most important problem in C-60 field effect carrier injection technique is how to form an excellent interface between insulator and solid C-60 layers. In this paper, we have investigated the solid C-60 growth on the poly-crystalline AlN (0 0 0 1) layers with the highly and/or the randomly c-axis-oriented surfaces by molecular beam epitaxial (MBE) technique. Moreover, we have compared with the conductive characteristic of the C-60/AlN FET fabricated on the highly and/or the randomly c-axis-oriented poly-crystalline AlN layers. The results strongly indicate that the c-axis orientation is an important factor to improve the performance of the C-60/poly-crystalline AlN FET. (c) 2007 Elsevier B.V. All rights reserved.