Three-dimensional (3D) thermoelastic stresses are computed for SiC single crystals which are grown with an off-axis orientation of the seed. The geometry is axisymmetric. The results are presented in terms of the resolved shear stress acting on the slip system. While in the on-axis case the resolved shear stress consists only of the component a,., in the off-axis case it consists of all stress components, whereas the dominant components are sigma(rz) sigma(rr) and sigma(zz). (c) 2006 Elsevier B.V. All rights reserved.