From studies on the epitaxial growth of CeO2 layers on Si(1 0 0) substrates using reactive DC magnetron sputtering, it has been found that the epitaxial CeO2 layer with (1 0 0) or (1 1 0) orientation is selectively grown by controlling substrate bias and the growth rate. Optimum bias for the CeO2(1 0 0) layer growth was +/- 15 V. In order to develop this technology into two-dimensional orientation selectivity, we attempt to grow CeO2(1 0 0) by low energy electron irradiation, as an alternative way to substrate bias application. It proved that electron beams in two energy regions of 30-40 and 80-100 eV are effective on preferential growth of CeO2(1 0 0) layers. (C) 2007 Elsevier B.V. All rights reserved.