We investigate the formation of silicide layers in(111) Si wafers with a high-current implanter. Cr ions form a disilicide layer of low sheet resistance. If the sample is also implanted with Ni, the total number of Cr atoms is reduced by sputtering, and the previously prepared CrSi2 layer is disordered. However, a stable textured Cr1-xNixSi2 phase can be prepared by proper annealing. Above 1150 degrees C the ternary phase segregates into CrSi2 and NiSi2. Thus the introduction of Ni can result in well-defined and stable Cr1-xNixSi2 alloys.